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HIGH POWER EFFICIENCY, LARGE SUBSTRATE, POLYCRYSTALLINE CDTE THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY AT HIGH DEPOSITION RATE FOR USE IN SOLAR ELECTRICITY GENERATION
HIGH POWER EFFICIENCY, LARGE SUBSTRATE, POLYCRYSTALLINE CDTE THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY AT HIGH DEPOSITION RATE FOR USE IN SOLAR ELECTRICITY GENERATION
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机译：分子束外延生长的高功率效率，大基板，多晶CDTE薄膜半导体光电电池结构，可用于太阳能发电
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摘要
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
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