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SINGLE-CRYSTAL SAPPHIRE FOR PRODUCING SINGLE-CRYSTAL SAPPHIRE SUBSTRATE FOR LED, SINGLE-CRYSTAL SAPPHIRE SUBSTRATE FOR LED, LUMINESCENT ELEMENT, AND PROCESSES FOR PRODUCING THESE
SINGLE-CRYSTAL SAPPHIRE FOR PRODUCING SINGLE-CRYSTAL SAPPHIRE SUBSTRATE FOR LED, SINGLE-CRYSTAL SAPPHIRE SUBSTRATE FOR LED, LUMINESCENT ELEMENT, AND PROCESSES FOR PRODUCING THESE
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机译：用于生产LED的单晶蓝宝石基板，用于LED的单晶蓝宝石基板，发光元件及其生产工艺
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摘要
Provided is single-crystal sapphire for producing a singe-crystal sapphire substrate for LEDs, the sapphire having an optimized content of Ti as an impurity. Also provided are a single-crystal sapphire substrate for LEDs, a luminescent element, and processes for producing the single-crystal sapphire, the substrate, and the element. Aluminum oxide having a high Ti content is used as a starting material and melted in a crucible in an inert gas atmosphere. A seed crystal constituted of single-crystal sapphire is brought into contact with the resultant melt and is then pulled up while being rotated, thereby producing an ingot of single-crystal sapphire. The ingot is cooled and, thereafter, a single-crystal sapphire substrate is cut out thereof. The Ti content of this single-crystal sapphire substrate is regulated to a value exceeding 12 ppm but not higher than 100 ppm. Thus, a single-crystal sapphire substrate for LEDs which is inhibited from deforming or having bubble defects is obtained.
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