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GATED DIODE HAVING AT LEAST ONE LIGHTLY-DOPED DRAIN (LDD) IMPLANT BLOCKED AND CIRCUITS AND METHODS EMPLOYING SAME
GATED DIODE HAVING AT LEAST ONE LIGHTLY-DOPED DRAIN (LDD) IMPLANT BLOCKED AND CIRCUITS AND METHODS EMPLOYING SAME
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机译：至少有一个轻度漏水（LDD）植入物阻塞的门控二极管和采用相同方法的电路和方法
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摘要
Gated diodes, manufacturing methods, and related circuits are provided wherein at least one lightly-doped drain (LDD) implant is blocked in the gated diode to reduce its capacitance. In this manner, the gated diode may be used in circuits and other applications whose performance is sensitive to load capacitance while still obtaining the performance characteristics of a gated diode. These characteristics include fast turn-on times and high conductance, making the gated diodes disclosed herein well-suited for electro-static discharge (ESD) protection circuits as one application example. The examples of the gated diode disclosed herein include a semiconductor substrate having a well region and insulating layer thereupon. A gate electrode is formed over the insulating layer. Anode and cathode regions are provided in the well region, wherein a P-N junction is formed. At least one LDD implant is blocked in the gated diode to reduce capacitance.
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