STRAINED SI BASED LAYER MADE BY UHV-CVD, AND DEVICES THEREIN

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  机译： 用特高压化学气相沉积法制得的应变SI基层及其装置

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  机译： “由特高压化学气相沉积制成的应变SI基层，并在其中进行设计”

• 5. STRAINED SI BASED LAYER MADE BY UHV-CVD, AND DEVICES THEREIN [P] . 韩国专利： KR20060033692A . 2006-04-19

  机译： 用特高压化学气相沉积法制得的应变SI基层及其装置

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