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Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices

机译:在非对称双栅极器件中使用二极管电压的独立控制来改变电源电压或参考电压的方法和装置

摘要

Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
机译:提供了使用对非对称双栅极器件中的二极管电压的独立控制来改变集成电路中的电源电压和参考电压中的一个或多个的方法和装置。提供了一种由电源电压和参考电压中的一个或多个控制的集成电路。该集成电路包括独立控制的不对称双栅极器件,以调节电源电压和参考电压中的一个或多个。独立控制可以包括例如背栅偏置。独立控制的不对称双栅极器件可以用于包括电压岛,静态RAM在内的多种应用中,并且可以提高处理单元的功率和性能。

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