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Testing a memory device having field effect transistors subject to threshold voltage shifts caused by bias temperature instability
Testing a memory device having field effect transistors subject to threshold voltage shifts caused by bias temperature instability
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机译：测试具有场效应晶体管的存储设备，该晶体管会遭受由偏置温度不稳定性引起的阈值电压漂移
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摘要
A supply voltage is set for a memory device at a first supply voltage level. Test data is written to the memory device at the first supply voltage level in response to setting the supply voltage. The supply voltage is decreased for the memory device to a second supply voltage level below the first supply voltage level in response to writing the test data. The test data is read from the memory device at the second supply voltage level in response to decreasing the supply voltage. The supply voltage is increased for the memory device to a third supply voltage level above the second supply voltage level in response to reading the test data. The test data is read from the memory device at the third supply voltage level in response to increasing the supply voltage. The test data written to the memory device at the first supply voltage level is compared to the test data read from the memory device at the third supply voltage level in response to reading the test data from the memory device at the third supply voltage level.
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