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Technique for strain engineering in silicon-based transistors by using implantation techniques for forming a strain-inducing layer under the channel region
Technique for strain engineering in silicon-based transistors by using implantation techniques for forming a strain-inducing layer under the channel region
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机译：利用注入技术在沟道区下形成应变诱导层的硅基晶体管应变工程技术
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摘要
By incorporating a semiconductor species having the same valence and a different covalent radius compared to the base semiconductor material on the basis of an ion implantation process, a strain-inducing material may be positioned locally within a transistor at an appropriate manufacturing stage, thereby substantially not contributing to overall process complexity and also not affecting the further processing of the semiconductor device. Hence, a high degree of flexibility may be provided with respect to enhancing transistor performance in a highly local manner.
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