Film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth

• 1. 交替注入反应物生长单层和多层过渡金属硫化物的方法 [P] . 中国专利： CN105800566A . 2016-07-27
• 2. 一种具有单层金属层的防火结构 [P] . 中国专利： CN113818583A . 2021-12-21
• 3. PROCESS FOR PREPARING A FILM HAVING ALTERNATING MONOLAYERS OF A METAL-METAL BONDED COMPLEX MONOLAYER AND AN ORGANIC MONOLAYER BY LAYER-BY LAYER GROWTH [P] . 美国专利： US2009075097A1 . 2009-03-19

  机译： 逐层生长制备具有金属键合复合单分子层和有机单分子层的交替单层膜的方法

• 4. Process for preparing a film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by layer growth [P] . 美国专利： US7445815B2 . 2008-11-04

  机译： 通过逐层生长来制备具有金属-金属结合的复合单层和有机单层的交替单层的膜的方法

• 5. PROCESS FOR PREPARING A THIN FILM HAVING ALTERNATING MONOLAYERS OF A METAL-METAL BONDED COMPLEX MONOLAYER AND AN ORGANIC MONOLAYER BY LAYER-BY LAYER COMPLEX [P] . 美国专利： US2007148441A1 . 2007-06-28

  机译： 逐层复合制备具有金属键合复合单层和有机单层交替单层的薄膜的方法

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• 9. Inorganic-organic composite nanoengineered films using self-assembled monolayers for directed zeolite film growth [R] . Dye, R. C. , Hermes, R. E. , Martinez, M. G. , 1997

• 1. A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer [J] . Sohail Ahmad ,Sugata Mukherjee . 石墨烯（英文） . 2014,第4期
• 2. Monolayers Langmuir-Blodgett Films of Synthetic Artificial Mimic Molecules That Resemble the Following Tetraether Lipids on Silicon Wafers [J] . Sri Vidawati ,Ulrich Rothe . 生物化学进展（英文） . 2015,第4期
• 3. Materials for Spintronics: Magnetic and Transport Properties of Ultrathin (Monolayer Graphene)/MnO(001) and MnO(001) Films [J] . Victor Ilyasov ,Besarion Meshi ,Anatoly Ryzhkin . 现代物理（英文） . 2011,第10期
• 4. Nano-tribological characteristics of lanthanum-based thin films on sulfonated self-assembled monolayer of 3-mercaptopropyl trimethoxysilane [J] . 白涛 ,程先华 . 稀土学报：英文版 . 2008,第1期
• 5. 过渡金属二硫属化物与单层MXene构成能带可调的复合双层材料 [C] . 马志楠 ,胡振芃 ,赵旭东 . 第七届国际分子模拟与信息技术应用学术会议 . 2014
• 6. 过渡金属掺杂C3N单层和硼掺杂C9N4单层的第一性原理研究 [A] . 赵亚蒙 . 2020