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AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT

机译：AlxGa（1-x）N单晶，AlxGa（1-x）N单晶的制备方法和光学元件

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摘要

A method of producing an Al_xGa_(1-x)N (0x≦1) single crystal is directed to growing an Al_xGa_(1-x)N single crystal by sublimation. The method includes the steps of preparing an underlying substrate having a composition ratio x identical to the composition ratio of the Al_xGa_(1-x)N single crystal, preparing a raw material of high purity, and growing an Al_xGa_(1-x)N single crystal on the underlying substrate by sublimating the raw material. The Al_xGa_(1-x)N single crystal has an absorption coefficient less than or equal to 100 cm⁻¹with respect to light at a wavelength greater than or equal to 250 nm and less than 300 nm, and an absorption coefficient less than or equal to 21 cm⁻¹with respect to light at a wavelength greater than or equal to 300 nm and less than 350 nm.

机译：一种生产Al _{x Ga _{（1-x） N（0 x Ga _{（1-x） N单晶。该方法包括以下步骤：制备具有与Al _{x Ga _{（1-x） N单晶的组成比相同的组成比x的下层基板。高纯度的原材料，并通过升华该原材料在下面的衬底上生长Al _{x Ga _{（1-x） N单晶。 Al _{x Ga _{（1-x） N单晶对光的吸收系数小于或等于100 cm ^{-1 波长大于或等于250 nm且小于300 nm，并且对于波长大于或等于300 nm的光的吸收系数小于或等于21 cm ^{-1 并且小于350 nm。}}}}}}}}}}}

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公开/公告号US2011104438A1

专利类型
公开/公告日2011-05-05

原文格式PDF
申请/专利权人 SATOSHI ARAKAWA;TAKASHI SAKURADA;YOSHIYUKI YAMAMOTO;ISSEI SATOH;KEISUKE TANIZAKI;HIDEAKI NAKAHATA;NAHO MIZUHARA;MICHIMASA MIYANAGA;
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申请/专利号US200913001749
发明设计人 TAKASHI SAKURADA;NAHO MIZUHARA;ISSEI SATOH;YOSHIYUKI YAMAMOTO;HIDEAKI NAKAHATA;KEISUKE TANIZAKI;MICHIMASA MIYANAGA;SATOSHI ARAKAWA;
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申请日2009-06-25
分类号C30B29/38;C30B23/02;C30B23/06;B32B3/00;B32B5/00;C09K3/00;
国家 US
入库时间 2022-08-21 18:12:21

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