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PHYSICS-BASED MOSFET MODEL FOR VARIATIONAL MODELING
PHYSICS-BASED MOSFET MODEL FOR VARIATIONAL MODELING
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机译：基于物理的MOSFET模型用于变化建模
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摘要
A method of optimizing MOSFET device production which includes defining key independent parameters, formulating those key independent parameters into a canonical variational form, calculating theoretical extracted parameters using at least one of key independent parameters in canonical variational form, physics-based analytical models, or corner models. The method also includes calculating simulated characteristics of a device using the key independent parameters and extracting target data parameters based on at least one of measured data and predicted data, comparing the simulated characteristics to the target data parameters, and modifying the theoretical extracted parameters or key independent parameters in canonical form as a result of the comparison. Then, calculating and outputting the simulated characteristics based on the modified theoretical extracted parameters and the modified key independent parameters in canonical form.
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