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MAINTENANCE METHOD FOR EPITAXIAL GROWTH APPARATUS, METHOD OF CALIBRATING PYROMETER, AND SUSCEPTOR FOR PYROMETER CALIBRATION
MAINTENANCE METHOD FOR EPITAXIAL GROWTH APPARATUS, METHOD OF CALIBRATING PYROMETER, AND SUSCEPTOR FOR PYROMETER CALIBRATION
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机译：表皮生长设备的维护方法，校准热释光器的方法以及用于热释光器校准的基座
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摘要
PROBLEM TO BE SOLVED: To predict whether a slip occurs in a process during maintenance, and to cope with slippages during the maintenance, rather not through opening of furnace opening, after the maintenance.;SOLUTION: A first susceptor 11 for calibration is used which includes a main thermocouple 13a, disposed at a position corresponding to a center position of a wafer in an epitaxial growth process and at least one auxiliary thermocouple 13b at a predetermined position in a radial direction, with the predetermined position being different from that of the main thermocouple 13a; and while the temperature in a reaction furnace 2 of an epitaxial growth apparatus 1 rises, temporal in-surface temperature distribution of the first susceptor 11 is measured with the main thermocouple 13a and auxiliary thermocouple 13b, and calibrate a pyrometer 9 by using the temperature data measured with the main thermocouple 13a, and to predict whether a slip occurs when an epitaxial layer is grown and formed on a surface of the wafer mounted on a second susceptor 15 for the epitaxial growth process, from the difference between the measured value of the main thermocouple 13a and the measured value of the auxiliary thermocouple.;COPYRIGHT: (C)2011,JPO&INPIT
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