首页> 外国专利> Making high density straight beam of e.g. nanotubes connected to a component comprises making growth pattern in the shape of cavity, growing the nanotubes from lateral zone and bottom of growth structure and removing the growth structure

Making high density straight beam of e.g. nanotubes connected to a component comprises making growth pattern in the shape of cavity, growing the nanotubes from lateral zone and bottom of growth structure and removing the growth structure

机译:制作例如连接到组件的纳米管包括以空腔形状制作生长图案,从生长结构的横向区域和底部生长纳米管并去除生长结构

摘要

The method of making high density straight beam of nanotubes or nanowires (2) connected to a component (4) at one of its end comprises making a growth pattern in the shape of a cavity, growing the nanotubes or nanowires from the lateral zone and bottom of a growth structure (6) and removing the growth structure. The growth of the nanotubes or nanowires is carried out in contact with the surface of the component. The growth structure comprises lateral openings for introducing reactive gases for growth. The growth structure is positioned on the component. The method of making high density straight beam of nanotubes or nanowires (2) connected to a component (4) at one of its end comprises making a growth pattern in the shape of a cavity, growing the nanotubes or nanowires from the lateral zone and bottom of a growth structure (6) and removing the growth structure. The growth of the nanotubes or nanowires is carried out in contact with the surface of the component. The growth structure comprises lateral openings for introducing reactive gases for growth. The growth structure is positioned on the component. The cavity is filled with a filling material, whose surface is planar, after the growth of the nanotubes or nanowires and before the removal of the nanotubes or nanowires, where the planar surface is in contact with a second component, and the growth structure and the first component are removed. Independent claims are included for: (1) a method for electrically connecting two components; and (2) a component comprising a beam of nanotubes or nanowires on its surface.
机译:制作在其一端之一连接到组件(4)的纳米管或纳米线(2)的高密度直束的方法包括制作空腔形状的生长图案,从侧面区域和底部生长纳米管或纳米线。去除生长结构(6)并去除生长结构。纳米管或纳米线的生长与部件的表面接触进行。生长结构包括用于引入反应性气体以进行生长的侧向开口。生长结构位于组件上。制作在其一端之一连接到组件(4)的纳米管或纳米线(2)的高密度直束的方法包括制作空腔形状的生长图案,从侧面区域和底部生长纳米管或纳米线。去除生长结构(6)并去除生长结构。纳米管或纳米线的生长与部件的表面接触进行。生长结构包括用于引入反应性气体以进行生长的侧向开口。生长结构位于组件上。在所述纳米管或纳米线的生长之后,在除去所述纳米管或纳米线之前,其中所述平坦表面与第二组分接触的所述生长结构的表面填充有填充材料,所述填充材料的表面是平坦的。第一个组件被删除。包括以下独立权利要求:(1)一种电连接两个组件的方法; (2)一种在其表面上包括纳米管或纳米线束的组件。

著录项

  • 公开/公告号FR2940798A1

    专利类型

  • 公开/公告日2010-07-09

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20090050337

  • 发明设计人 SZKUTNIK PIERRE DAVID;DIJON JEAN;

    申请日2009-01-20

  • 分类号B82B1/00;C01B31/02;H01L23/48;

  • 国家 FR

  • 入库时间 2022-08-21 18:26:36

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