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Charge-coupled device image sensor i.e. matrix color image sensor, has grids i.e. polycrystalline silicon grid lines, covered with respective conductor lines that are directly contacted with grid lines at locations along grid lines
Charge-coupled device image sensor i.e. matrix color image sensor, has grids i.e. polycrystalline silicon grid lines, covered with respective conductor lines that are directly contacted with grid lines at locations along grid lines
The sensor has a photosensitive structure formed on a front surface of a P-type thin silicon substrate (10) that is carried on a transfer substrate in view of illumination by a rear surface. The thin silicon substrate has a thickness of about 3 to 50 micrometers. Electric load transfer grids i.e. polycrystalline silicon grid lines (G1, G2), of the structure are covered with respective metal conductor lines (L1, L2) made of aluminum. The conductor lines extend along the grid lines, and are directly contacted with the grid lines at locations distributed along the grid lines.
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