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PROCEDURES FOR THE DISCHANGE OF DEVELOPMENT EFFECTS IN AND FOR OPENS IN PHOTOLACK BY MORE-FAVOUR DEVELOPMENTS/SPILLS
PROCEDURES FOR THE DISCHANGE OF DEVELOPMENT EFFECTS IN AND FOR OPENS IN PHOTOLACK BY MORE-FAVOUR DEVELOPMENTS/SPILLS
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机译:通过更多喜爱的开发/项目分发光影中的开放效果和开放时间的程序
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摘要
In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.
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