首页> 外国专利> Flash memory device e.g. flash memory card, for use in computer system e.g. personal computer, has floating gate type memory transistor as selection transistor of memory block's NAND cell unit for storing random data in memory blocks

Flash memory device e.g. flash memory card, for use in computer system e.g. personal computer, has floating gate type memory transistor as selection transistor of memory block's NAND cell unit for storing random data in memory blocks

机译:闪存设备闪存卡,用于计算机系统,例如个人计算机,具有浮栅型存储晶体管作为存储块NAND单元单元的选择晶体管,用于将随机数据存储在存储块中

摘要

The flash memory device has a set of memory blocks, where each memory block includes a NAND cell unit having a selection transistor e.g. string selection transistor (SST) or a ground selection transistor (GST), connected in series to a set of memory cells (MC) controlled by respective word lines. The selection transistor is a floating gate type memory transistor for storing random data in the memory blocks. The selection transistor is configured to have a variably programmable threshold voltage. Independent claims are also included for the following: (1) a method for programming a flash memory device (2) a solid state memory module for a computer system.
机译:闪速存储器件具有一组存储块,其中每个存储块包括具有选择晶体管的NAND单元单元,所述选择晶体管例如为NMOS。串选择晶体管(SST)或地选择晶体管(GST)串联连接到由各个字线控制的一组存储单元(MC)。选择晶体管是用于在存储块中存储随机数据的浮栅型存储晶体管。选择晶体管被配置为具有可变可编程的阈值电压。还包括以下方面的独立权利要求:(1)一种用于对闪存设备编程的方法(2)用于计算机系统的固态存储模块。

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