1 to C 4 is a straight chain alkyl group or the crushing of ) ; With the ZnO films for making precursor compounds of the present invention may perform a ZnO thin film deposition process at a low temperature below 500 , where desired it is possible to easily form a ZnO thin film ."/>
ZnO thin film and method for manufacturing a precursor of ZnO thin films by chemical vapor deposition using the same
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ZnO thin film and method for manufacturing a precursor of ZnO thin films by chemical vapor deposition using the same
ZnO thin film and method for manufacturing a precursor of ZnO thin films by chemical vapor deposition using the same
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机译：ZnO薄膜及使用其的化学气相沉积制造ZnO薄膜的前体的方法
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摘要
The present invention relates to a method for producing a ZnO thin film by a chemical vapor deposition method for producing ZnO films using precursor and this will . ; ZnO thin film for producing the precursor of the present invention has a structure of the following formula (1) . ; st32: che xmlns: st32 = "http://alexandria.fairviewresearch.com/ns/st32/" /st32: che ; ( wherein , R is C 1 to C 4 is a straight chain alkyl group or the crushing of ) ; With the ZnO films for making precursor compounds of the present invention may perform a ZnO thin film deposition process at a low temperature below 500 , where desired it is possible to easily form a ZnO thin film .
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