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MANUFACTURING METHOD OF RESISTIVITY STANDARD SAMPLE OF EPITAXIAL WAFER AND REVISION METHOD OF RESISTIVITY MEASURING DEVICE USED THE RESISTIVITY STANDARD SAMPLE MANUFACTURED BY THE METHOD
MANUFACTURING METHOD OF RESISTIVITY STANDARD SAMPLE OF EPITAXIAL WAFER AND REVISION METHOD OF RESISTIVITY MEASURING DEVICE USED THE RESISTIVITY STANDARD SAMPLE MANUFACTURED BY THE METHOD
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机译：外延晶片的电阻率标准样品的制造方法和使用该方法制造的电阻率标准样品的电阻率测量装置的修正方法
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摘要
PURPOSE: A manufacturing method of a resistivity standard sample of an epitaxial wafer and a revision method of a resistivity measuring device used the resistivity standard sample manufactured by the method are provided to maintain non resistance value constant by forming a thermal oxide layer on the surface of a silicon single crystalline layer. CONSTITUTION: A wafer doped with constant resistance is manufactured(S1). An epitaxial wafer is generated by growing a single crystal silicon layer on the wafer(S2). A native oxide layer and a particle generated on a single crystal silicon layer are removed(S3). A thermal oxide layer is generated on surface of the single crystal silicon layer by using a hot furnace(S4). A surface non-resistance measurement apparatus is provided. The surface resistivity of the epitaxial wafer is measured.
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