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WASHING SOLUTION FOR A CHALCOGENIDE COMPOUND CONTAINING AN AQUEOUS SOLUTION INCLUDING TRIFLUOROACETIC ACID, ISOPROPYL ALCOHOL, AND DEIONIZED WATER
WASHING SOLUTION FOR A CHALCOGENIDE COMPOUND CONTAINING AN AQUEOUS SOLUTION INCLUDING TRIFLUOROACETIC ACID, ISOPROPYL ALCOHOL, AND DEIONIZED WATER
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机译：含三氟乙酸，异丙醇和去离子水的含硫化合物的洗涤溶液
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摘要
PURPOSE: A washing solution for a chalcogenide compound is provided to prevent the loss of a phase change material layer during a washing process after etching, and to use the washing solution for washing a semiconductor device.;CONSTITUTION: A washing solution for washing a semiconductor device is used for a washing process after etching of a phase change material layer formed with a chalcogenide compound. The washing solution includes an aqueous solution consisting of trifluoroacetic acid, isopropyl alcohol, and deionized water. The mixture ratio of the trifluoroacetic acid, the isopropyl alcohol, and the deionized water is 3:5:2.;COPYRIGHT KIPO 2011
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