METHOD FOR MANUFACTURING A VERTICAL COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR, CAPABLE OF IMPROVING THE ELECTRICAL CHARACTERISTIC OF A PHOTO DIODE

• 1. 制造具有无等离子体损坏的光电二极管的互补金属氧化物半导体图像传感器的方法 [P] . 中国专利： CN101064281B . 2010.07.21
• 2. 制造具有无等离子体损坏的光电二极管的互补金属氧化物半导体图像传感器的方法 [P] . 中国专利： CN101866938A . 2010-10-20
• 3. METHOD FOR MANUFACTURING A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR, CAPABLE OF IMPROVING PHOTOSENSITIVITY [P] . 韩国专利： KR20100074497A . 2010-07-02

  机译： 能够提高光敏性的互补金属氧化物-半电子图像传感器的制造方法

• 4. MANUFACTURING METHOD OF A CMOS IMAGE SENSOR, CAPABLE OF IMPROVING THE OUTPUT CHARACTERISTIC UNIFORMITY BETWEEN PHOTO DIODES [P] . 韩国专利： KR20100045110A . 2010-05-03

  机译： 能够提高光电二极管之间的输出特性一致性的CMOS图像传感器的制造方法

• 5. METHOD FOR MANUFACTURING A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR, CAPABLE OF PREVENTING THE AFTERIMAGE OF AN IMAGE BY INCREASING THE MOBILITY OF ELECTRONS [P] . 韩国专利： KR20100074521A . 2010-07-02

  机译： 制造互补的金属氧化物-半导体传感器图像传感器的方法，该传感器能够通过增加电子的移动性来防止图像的出现

• 1. X-ray detection based on complementary metal-oxide-semiconductor sensors [J] . Qian-Qian Cheng, Chun-Wang Ma, Yan-Zhong Yuan, 核技术（英文版） . 2019,第001期
• 2. Evaluating Low-Cost Commercially Available Sensors for Air Quality Monitoring and Application of Sensor Calibration Methods for Improving Accuracy [J] . Nam H. Nguyen, Huy X. Nguyen, Thuan T. B. Le, 大气污染开放期刊（英文） . 2021,第001期
• 3. Avalanche Characteristics of the Te-Doped Amorphous Se Photoconductive Target for a Complementary Metal-Oxide-Semiconductor Image Sensor [J] . Wug-Dong PARK, Kenkichi TANIOKA Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第8a11期
• 4. Multimodal Complementary Metal-Oxide-Semiconductor Sensor Device for Imaging of Fluorescence and Electrical Potential in Deep Brain of Mouse [J] . Ayato Tagawa, Hiroki Minami, Masahiro Mitani, Japanese journal of applied physics . 2010,第1issue2期
• 5. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure [J] . Sang-Jin Lee, Jae-Hoon Park, Kum-Mi Oh, Japanese journal of applied physics . 2011,第6Issue1期
• 6. A 220 M-Range Direct Time-of-Flight 688 × 384 CMOS Image Sensor with Sub-Photon Signal Extraction (SPSE) Pixels Using Vertical Avalanche Photo-Diodes and 6 KHz Light Pulse Counters [C] . Shinzo Koyama, Motonori Ishii, Shigeru Saito, IEEE Symposium on VLSI Circuits . 2018
• 7. Analog Readout Methods for CMOS (Complementary metal-oxide-semiconductor) Image Sensors Utilizing a Global Feedback [D] . Zhang, Yang 2011
• 8. A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor [O] . Yutaka Hirose, Shinzo Koyama, Motonori Ishii, 2018
• 9. A low-noise, single-photon avalanche diode in standard 0.13 µm Complementary Metal-Oxide-Semiconductor process [O] . Ryan Field, Jenifer Lary, John Cohn, 2013
• 10. U.S. Army Manufacturing Methods and Technology Program Covering Application of Automated Manufacturing Process to Methods for Affixing Electrical Connectors to Cables (Project No. 3091) [R] . Tartaglia, F. E. 1979

• 1. Modeling the photon counting and photoelectron counting characteristics of quanta image sensors [J] . Bowen Liu ,Jiangtao Xu . 半导体学报：英文版 . 2021,第6期
• 2. Performance Evaluation of Super-Resolution Methods Using Deep-Learning and Sparse-Coding for Improving the Image Quality of Magnified Images in Chest Radiographs [J] . Kensuke Umehara ,Junko Ota ,Naoki Ishimaru . 医学影像期刊（英文） . 2017,第3期
• 3. In situ monitoring methods for selective laser melting additive manufacturing process based on images-A review [J] . Bo Wu ,Xiao-yuan Ji ,Jian-xin Zhou . 中国铸造 . 2021,第004期
• 4. 用于CMOS图像传感器的光电二极管的模型 [C] . 刁静 ,林祖伦 . 第十四届全国半导体集成电路、硅材料学术年会 . 2005
• 5. CMOS图像传感器光电二极管的辐射损伤及防护研究 [A] . 武钊 . 2017