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NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD OF MANUFACTURING THE SAME, USING ONLY SIDE OF P-TYPE NITRIDE SEMICONDUCTOR WITH ELO AS P-TYPE NITRIDE SEMICONDUCTOR IN A FINAL LIGHT-EMITTING STRUCTURE
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD OF MANUFACTURING THE SAME, USING ONLY SIDE OF P-TYPE NITRIDE SEMICONDUCTOR WITH ELO AS P-TYPE NITRIDE SEMICONDUCTOR IN A FINAL LIGHT-EMITTING STRUCTURE
PURPOSE: A nitride semiconductor light emitting device and a method of manufacturing the same are provided to improve the hole density and crystalline of a p-type nitride semiconductor.;CONSTITUTION: A mask layer(140) is formed on an n-type nitride semiconductor substrate(103) and has an opening exposing a part of the top of the substrate. The p-type nitride semiconductor layer(107) is formed on the mask layer. An active layer(105) is formed on a part of the substrate which is exposed by the opening of the mask layer and is contacted with the side of the p-type nitride semiconductor layer. A p-type electrode(110) is formed on the p-type nitride semiconductor layer. An n-type electrode(120) is formed on the bottom of the substrate backside.;COPYRIGHT KIPO 2010
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