首页> 外国专利> SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, CAPABLE OF PREVENTING NOT ONLY A VOID DUE TO A NECK BUT ALSO FALLING OF A PILLAR TYPE ACTIVE DUE TO THE NECK

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, CAPABLE OF PREVENTING NOT ONLY A VOID DUE TO A NECK BUT ALSO FALLING OF A PILLAR TYPE ACTIVE DUE TO THE NECK

机译:半导体装置及其制造方法,能够防止由于颈部而导致的不只是空洞,而且由于颈部而导致的柱状活动性下降

摘要

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to improve the characteristics and reliability of the semiconductor device by stabilizing a vertical transistor manufacturing process.;CONSTITUTION: In a semiconductor device and a method of manufacturing the same, a semiconductor substrate(100) comprises a pillar type active(100a). The pillar type active has a flat side. A spacer(112), having a thickness of 50-250 angstrom, is formed on the both sides of the upper part of the pillar type active. A gate including a metal film protects the bottom of the pillar type active. The gate comprises a metal layer.;COPYRIGHT KIPO 2010
机译:目的:提供一种半导体器件及其制造方法,以通过稳定垂直晶体管的制造工艺来提高半导体器件的特性和可靠性。 (100)包括支柱型有源装置(100a)。立柱式有源装置具有平坦的侧面。在柱型活性物质的上部的两侧上形成厚度为50-250埃的隔离物(112)。包括金属膜的栅极保护柱型有源元件的底部。闸门包括金属层。; COPYRIGHT KIPO 2010

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