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SINGLE CRYSTAL THIN FILM BY A METAL SILICIDE SEED LAYER AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING A CRACK, A LATTICE DEFECT, AND A LATTICE MISMATCH
SINGLE CRYSTAL THIN FILM BY A METAL SILICIDE SEED LAYER AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING A CRACK, A LATTICE DEFECT, AND A LATTICE MISMATCH
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机译:金属硅化物层的单晶薄膜及其制造方法,能够防止裂纹,晶格缺陷和晶格失配
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摘要
PURPOSE: A single crystal thin film by a metal silicide seed layer and a manufacturing method thereof are provided to improve the quality of a compound single crystal thin film by forming a metal silicide seed layer between the single crystal layer and the substrate.;CONSTITUTION: An insulation layer is deposited on a substrate(S200). A polycrystal or amorphous silicon layer is deposited on the insulation layer(S210). The polycrystal or amorphous silicon layer is patterned(S230). A thin film is formed by depositing the metal on the patterned polycrystal or amorphous silicon layer. The patterned metal silicide layer is formed by thermally processing the substrate with the metal thin film(S240). A single crystal layer is grown on the patterned metal silicide layer(S250).;COPYRIGHT KIPO 2010
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