首页> 外国专利> SINGLE CRYSTAL THIN FILM BY A METAL SILICIDE SEED LAYER AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING A CRACK, A LATTICE DEFECT, AND A LATTICE MISMATCH

SINGLE CRYSTAL THIN FILM BY A METAL SILICIDE SEED LAYER AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING A CRACK, A LATTICE DEFECT, AND A LATTICE MISMATCH

机译:金属硅化物层的单晶薄膜及其制造方法,能够防止裂纹,晶格缺陷和晶格失配

摘要

PURPOSE: A single crystal thin film by a metal silicide seed layer and a manufacturing method thereof are provided to improve the quality of a compound single crystal thin film by forming a metal silicide seed layer between the single crystal layer and the substrate.;CONSTITUTION: An insulation layer is deposited on a substrate(S200). A polycrystal or amorphous silicon layer is deposited on the insulation layer(S210). The polycrystal or amorphous silicon layer is patterned(S230). A thin film is formed by depositing the metal on the patterned polycrystal or amorphous silicon layer. The patterned metal silicide layer is formed by thermally processing the substrate with the metal thin film(S240). A single crystal layer is grown on the patterned metal silicide layer(S250).;COPYRIGHT KIPO 2010
机译:目的:提供一种通过金属硅化物籽晶层形成的单晶薄膜及其制造方法,以通过在单晶层和衬底之间形成金属硅化物籽晶层来提高复合单晶薄膜的质量。在衬底上沉积绝缘层(S200)。在绝缘层上沉积多晶或非晶硅层(S210)。对多晶或非晶硅层进行构图(S230)。通过在图案化的多晶硅或非晶硅层上沉积金属来形成薄膜。通过对具有金属薄膜的基板进行热处理来形成图案化的金属硅化物层(S240)。在图案化的金属硅化物层上生长单晶层(S250)。; COPYRIGHT KIPO 2010

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