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DIODE FORMATION METHOD OF PHASE CHANGE MEMORY DEVICE WHICH WHILE DAMAGE OF SEMICONDUCTOR SUBSTRATE IS REDUCED, USES ELF GROWTH METHOD KEEPING CONCENTRATION OF DECIDED IMPURITY REGION
DIODE FORMATION METHOD OF PHASE CHANGE MEMORY DEVICE WHICH WHILE DAMAGE OF SEMICONDUCTOR SUBSTRATE IS REDUCED, USES ELF GROWTH METHOD KEEPING CONCENTRATION OF DECIDED IMPURITY REGION
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机译：减少半导体基质损伤的相变存储器的二极管形成方法，采用ELF生长法保持确定的杂质区域浓度
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摘要
PURPOSE: A diode formation method of the phase change memory device using the self growth method forms diode into the self growth method using the conductive pattern layer. An air gap is prevented and the damage of the substrate surface is prevented.;CONSTITUTION: The impurity region is formed in the selected part of the semiconductor substrate(10). The conductive pattern(14a) the catalyst role at the upper part of the impurity region is formed. Supplies the diode raw material to the above semiconductor result of a circuit board in which the conductive pattern is formed. It makes something/somebody grow up between the impurity region and conductive pattern to sleep the diode(20). The conductive pattern is composed of monolayer or multi-layer.;COPYRIGHT KIPO 2010
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