首页> 外国专利> MANUFACTURING METHOD OF CRYSTALLINE SUBSTRATE, CAPABLE OF MINIMIZING DEFECTS IN A SUBSTRATE, A CRYSTALLINE SUBSTRATE MANUFACTURED USING THE SAME, A LIGHT EMITTING DEVICE INCLUDING A CRYSTALLINE SUBSTRATE AND A MANUFACTURING METHOD THEREOF

MANUFACTURING METHOD OF CRYSTALLINE SUBSTRATE, CAPABLE OF MINIMIZING DEFECTS IN A SUBSTRATE, A CRYSTALLINE SUBSTRATE MANUFACTURED USING THE SAME, A LIGHT EMITTING DEVICE INCLUDING A CRYSTALLINE SUBSTRATE AND A MANUFACTURING METHOD THEREOF

机译:结晶基质的制造方法,能够使基质中的缺陷最小化,使用该基质制造的结晶基质,包括结晶基质的发光装置及其制造方法

摘要

PURPOSE: A manufacturing method of crystalline substrate, a crystalline substrate manufactured using the same, a light emitting device including a crystalline substrate, and a manufacturing method thereof are provided to obtain a uniform surface of a gallium nitride single crystal substrate using an electric potential prevention layer.;CONSTITUTION: A lower epi layer(12) is formed on a base substrate(10). A part of an electric potential region within the lower epi layer is selectively removed. Accordingly, an electric potential prevention layer is formed within the electric potential region. A top epi layer(18) is formed on the lower epi layer. The electric potential region is selectively removed using the dry etch or the wet etch process.;COPYRIGHT KIPO 2010
机译:用途:提供晶体衬底的制造方法,使用该晶体衬底制造的晶体衬底,包括该晶体衬底的发光器件及其制造方法,以通过使用电势防止来获得氮化镓单晶衬底的均匀表面组成:下部外延层(12)形成在基础基板(10)上。下部外延层内的电势区域的一部分被选择性地去除。因此,在电位区域内形成了电位防止层。顶部外延层(18)形成在下部外延层上。使用干蚀刻或湿蚀刻工艺有选择地去除电位区域。; COPYRIGHT KIPO 2010

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号