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NITRIDE THIN FILM STRUCTURE CAPABLE OF GETTING AN ELO EFFECT DUE TO A HOLLOW STRUCTURE, AND A FORMING METHOD THEREOF
NITRIDE THIN FILM STRUCTURE CAPABLE OF GETTING AN ELO EFFECT DUE TO A HOLLOW STRUCTURE, AND A FORMING METHOD THEREOF
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机译：能够获得空心结构的ELO效果的氮化物薄膜结构及其形成方法
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摘要
PURPOSE: A nitride thin film structure and a forming method thereof are provided to manufacture an optoelectronic device with high efficiency and high reliability by growing up nitride semiconductor epitaxial layer with superior material property.;CONSTITUTION: A nitride thin film structure and a forming method thereof comprise a substrate(100), a hollow structure(105), and a nitride thin film(120). The nitride film comprises a first nitride film, a second nitride film, and a third nitride film. The first nitride film is form on a buffering layer above a hollow structure. The second nitride film is formed on the first nitride film. The third nitride film is formed on the second nitride film. The hollow structure is spread in the top of the substrate.;COPYRIGHT KIPO 2010
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