首页> 外国专利> HIGH-CONTACT STRUCTURE FOR SOLID-PARTICLE, HIGH-CONTACT STRUCTURE BASE FOR SOLID PARTICLE, AND PROCESSES FOR PRODUCING THESE

HIGH-CONTACT STRUCTURE FOR SOLID-PARTICLE, HIGH-CONTACT STRUCTURE BASE FOR SOLID PARTICLE, AND PROCESSES FOR PRODUCING THESE

机译:固体颗粒的高接触结构,固体颗粒的高接触结构及其制备方法

摘要

A structure having strong contact with solid particles comprising an assembly formed by secondary aggregation which is further aggregation of aggregates each formed by primary aggregation of primary particles each made of a metal and/or a metal oxide, wherein an average primary particle diameter of the primary particles is in a range from 1 to 100 µm, and, among void pores formed by the aggregates, a volume of void pores having pore diameters in a range within ±50% away from an average void pore diameter of the void pores is equal to or above 60% of a total volume of the void pores.
机译:与固体颗粒具有强接触性的结构,其包含通过二次聚集形成的集合体,该集合体是通过分别由金属和/或金属氧化物制成的一次颗粒的一次聚集而形成的聚集体的进一步聚集,其中一次的平均一次粒径颗粒在1至100μm的范围内,并且在由聚集体形成的孔隙中,孔隙的体积与孔隙的平均孔隙孔径相差±50%以内。或大于孔隙总体积的60%。

著录项

  • 公开/公告号EP2002892A4

    专利类型

  • 公开/公告日2010-06-23

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO;

    申请/专利号EP20070739757

  • 发明设计人 BANNO KOUZI;KAYAMA TOMOYUKI;

    申请日2007-03-27

  • 分类号B01J35/10;B01D53/94;B01J23/66;B01J35/02;B01J37/02;B01J37/03;B01J37/08;B01J37/16;F01N3/02;

  • 国家 EP

  • 入库时间 2022-08-21 18:38:06

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