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IN-SITU MELT AND REFLOW PROCESS FOR FORMING FLIP-CHIP INTERCONNECTIONS AND SYSTEM THEREOF

机译:形成倒装芯片互连的原位熔化和回流过程及其系统

摘要

A method for fabricating a flip-chip semiconductor package comprising processing a semiconductor device, for example a semiconductor chip and processing a device carrier, for example a substrate. The semiconductor device comprises bump structures formed on a surface thereof. The substrate comprises bond pads formed on a surface thereof. The semiconductor chip is heated to a chip process temperature. The chip process temperature melts solder portions on the bump structures. The substrate is heated to a substrate process temperature, wherein said substrate process temperature may be different to the chip process temperature. The semiconductor chip is spatially aligned in relation to the substrate to correspondingly align the bump structures in relation to the bond pads. The semiconductor chip is displaced towards the substrate to abut the bump structures with the bond pads to thereby form bonds there between. A system for performing the above method is also disclosed.
机译:一种用于制造倒装芯片半导体封装的方法,该方法包括处理半导体器件,例如半导体芯片,以及处理器件载体,例如衬底。半导体器件包括形成在其表面上的凸块结构。基板包括形成在其表面上的接合垫。半导体芯片被加热到芯片处理温度。芯片处理温度使凸块结构上的焊料部分熔化。将衬底加热到​​衬底处理温度,其中所述衬底处理温度可以不同于芯片处理温度。半导体芯片相对于基板在空间上对准,以相对于键合焊盘相对应地对准凸块结构。半导体芯片朝着基板移位,以使凸块结构与键合焊盘邻接,从而在它们之间形成键合。还公开了用于执行上述方法的系统。

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