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Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same
Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same
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机译：具有不超过平均自由程的纳米接触部分的磁阻效应元件和利用该元件的磁头
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摘要
A magnetoresistance effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the pinned layer and including at least one nano-contact portion disposed at least one portion between the free layer and the pinned layer. The nano-contact portion has a dimension, including at least one of a length in the layer lamination direction and a length in a direction normal to the layer lamination direction, being not more than Fermi length. The nano-contact portion is provided, in an inside portion thereof, with a magnetic wall composed of either one of Bloch magnetic wall, Nëel magnetic wall or a combination wall thereof.
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