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Coaxial-to-microstrip transitions and manufacturing methods

机译：同轴到微带的过渡和制造方法

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摘要

Coaxial-to-microstrip transitions may include a microstrip line and coaxial-line assembly. The microstrip line includes a first dielectric having an aperture, a conductive strip disposed on one primary face of the first dielectric, and a ground plane disposed on the opposite primary face of the first dielectric. The coaxial-line assembly includes an outer conductor and an inner conductor. In some examples, the ground plane extends between the outer conductor and the inner conductor on a first side of the coaxial-line assembly proximate the conductive strip and an aperture cross section extends beyond the outer conductor on a second side of the coaxial-line assembly distal the conductive strip. In some examples, the ground plane has a non-circular aperture. In some examples, the outer conductor encloses an area that is less than an area of the aperture. In some examples, the enclosed area has a width that is less than a corresponding width of the first aperture.

机译：同轴到微带的过渡可以包括微带线和同轴线组件。微带线包括具有孔的第一电介质，设置在第一电介质的一个主面上的导电带和设置在第一电介质的相对的主面上的接地平面。同轴线组件包括外部导体和内部导体。在一些示例中，接地平面在同轴线组件的靠近导电带的第一侧上的外部导体和内部导体之间延伸，并且孔径横截面延伸超出同轴线组件的第二侧上的外部导体。导电条的远端。在一些示例中，接地平面具有非圆形的孔。在一些示例中，外部导体包围小于孔的面积的面积。在一些示例中，封闭区域的宽度小于第一孔的相应宽度。

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公开/公告号US7750764B2

专利类型
公开/公告日2010-07-06

原文格式PDF
申请/专利权人 DAVID K. SNODGRASS;THOMAS M. GAUDETTE;MARK V. FAULKNER;THOMAS G. FLACK;THOMAS E. HALTERMAN;MARIO PINIMONTI LA MARCHE;EDWARD B. ANDERSON;
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申请/专利号US20080038546
发明设计人 THOMAS G. FLACK;THOMAS E. HALTERMAN;MARK V. FAULKNER;EDWARD B. ANDERSON;THOMAS M. GAUDETTE;DAVID K. SNODGRASS;MARIO PINIMONTI LA MARCHE;
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申请日2008-02-27
分类号H01P5/08;
国家 US
入库时间 2022-08-21 18:48:15

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