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首页> 外国专利> CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body

CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body

机译：使用N / P + 衬底的CMOS（互补金属氧化物半导体）型固态图像拾取装置，其中N-型半导体层被层压在P + 型衬底主体上

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摘要

A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
机译：固态图像拾取装置包括：半导体衬底，其包括：具有P型杂质的衬底主体;和设置在该衬底主体上的第一N型半导体层;摄像区域，其包括多个光电转换器，其中多个光电转换器包括：第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上;以及第一外围电路区域，其包括第一P型半导体在第一N型半导体层上形成的层。固态图像拾取装置还包括第二外围电路区域，该第二外围电路区域包括形成在第一N型半导体层上并连接至基板主体的第二P型半导体层。

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