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Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode
Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode
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机译：用GaAs / AlGaAs隧道二极管形成多结太阳能电池结构的方法
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摘要
A method of forming a multijunction solar cell includes providing a substrate, forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell and forming first and second tunnel junction layers between the first and second subcells. The first tunnel junction layer includes GaAs over the first subcell and the second tunnel junction layer includes aluminum gallium arsenide (AlGaAs) over the first tunnel junction layer. The method further includes forming a third subcell having a homojunction base and emitter disposed over the middle subcell.
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