Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry

• 1. 一种微流靶激光等离子体软X射线-极紫外光源 [P] . 中国专利： CN101111119B . 2011.05.18
• 2. 一种微流靶激光等离子体软X射线－极紫外光源 [P] . 中国专利： CN101111119A . 2008-01-23
• 3. NANOMETER-SCALE LITHOGRAPHY USING EXTREME ULTRAVIOLET/SOFT X-RAY LASER INTERFEROMETRY [P] . 美国专利： US2008175348A1 . 2008-07-24

  机译： 使用极紫外/软X射线激光干涉术的纳米级光刻技术

• 4. Cleaning method for reflective optical element, particularly for soft X-ray and extreme ultraviolet wavelength range, and for operation of extreme ultraviolet lithography device, involves heating reflective optical element [P] . 德国专利： DE102006042987A1 . 2008-04-03

  机译： 用于反射光学元件，特别是用于软X射线和极紫外波长范围的清洁方法以及用于极紫外光刻设备的清洁方法包括加热反射光学元件

• 5. NANOMETER-SCALE ABLATION USING FOCUSED, COHERENT EXTREME ULTRAVIOLET/SOFT X-RAY LIGHT [P] . 美国专利： US2011042353A1 . 2011-02-24

  机译： 使用聚焦，相干极紫外/软X射线光进行纳米级烧蚀

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