首页> 外国专利> METHOD FOR DESTRUCTION OF METALLIC CARBON NANOTUBES, METHOD FOR PRODUCTION OF AGGREGATE OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR PRODUCTION OF THIN FILM OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR DESTRUCTION OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR

METHOD FOR DESTRUCTION OF METALLIC CARBON NANOTUBES, METHOD FOR PRODUCTION OF AGGREGATE OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR PRODUCTION OF THIN FILM OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR DESTRUCTION OF SEMICONDUCTING CARBON NANOTUBES, METHOD FOR

机译：金属碳纳米管的破坏方法，半导电性碳纳米管的凝聚物的制造方法，半导电性碳纳米管的薄膜的制造方法，半导电性碳纳米管的破坏方法，半导电性碳纳米管的破坏方法

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摘要

A method for destruction of metallic carbon nanotubes is provided. The method includes irradiating a mixture of semiconducting carbon nanotubes and metallic carbon nanotubes with energy beams (such as laser light), thereby selectively destroying metallic carbon nanotubes or semiconducting carbon nanotubes. The energy beams have energy components for resonance absorption by the metallic carbon nanotubes or semiconducting carbon nanotubes.

机译：提供了一种破坏金属碳纳米管的方法。该方法包括用能量束（例如激光）照射半导体碳纳米管和金属碳纳米管的混合物，从而选择性地破坏金属碳纳米管或半导体碳纳米管。能量束具有用于由金属碳纳米管或半导体碳纳米管共振吸收的能量分量。

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公开/公告号US2010003809A1

专利类型
公开/公告日2010-01-07

原文格式PDF
申请/专利权人 HOUJIN HUANG;
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申请/专利号US20060459782
发明设计人 HOUJIN HUANG;
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申请日2006-07-25
分类号H01L21/26;G21G5;H01L21/20;
国家 US
入库时间 2022-08-21 18:49:19

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