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Apparatus and Method for Placement of Boosting Cell With Adaptive Booster Scheme

机译:用自适应助推器方案放置助推细胞的装置和方法

摘要

A memory is provided. The memory includes memory arrays and boost converter circuitry. The boost converter circuitry provides at least one boosted voltage to each of the memory arrays when the memory array is being accessed. The boosted voltages may include a word line voltage, and/or a pass gate voltage provided to the gates of pass line transistor in a sector decoders and/or an array decoder for the memory cells being accessed. The boost converter circuitry includes at least two boost converters, and a switch. When one of the memory arrays is accessed, the switch either couples the boost converters together or does not couple the boost converters together based on the distance of the memory array being accessed from the boost converters.
机译:提供内存。该存储器包括存储器阵列和升压转换器电路。当访问存储器阵列时,升压转换器电路为每个存储器阵列提供至少一个升压电压。升压的电压可以包括字线电压和/或在被访问的存储单元的扇区解码器和/或阵列解码器中提供给传输线晶体管的栅极的传输门电压。升压转换器电路包括至少两个升压转换器和一个开关。当访问存储器阵列之一时,开关基于从升压转换器访问的存储器阵列的距离将升压转换器耦合在一起或不将升压转换器耦合在一起。

著录项

  • 公开/公告号US2010110819A1

    专利类型

  • 公开/公告日2010-05-06

    原文格式PDF

  • 申请/专利权人 CHIN-GHEE CHNG;TEOH BOON-WENG;

    申请/专利号US20080262123

  • 发明设计人 TEOH BOON-WENG;CHIN-GHEE CHNG;

    申请日2008-10-30

  • 分类号G11C5/14;G11C8/00;G11C8/10;

  • 国家 US

  • 入库时间 2022-08-21 18:52:24

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