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Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors

机译：由硒化铟和硒化铜前体形成硒化铜铟薄膜和/或硒化铜铟镓硒薄膜

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摘要

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticlulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium galium selenide films (66) on substrates (52).

机译：液体基硒化铟和硒化铜前驱体，包括铜-有机硒化物，硒化铜颗粒悬浮液，液体溶剂中的硒化亚铜乙二胺悬浮液，溶剂中的纳米微粒硒化铟悬浮液和硒化铟亚乙基二胺配位化合物，可用于形成结晶铜-硒化铟和/或铜铟硒化镓薄膜（ 66 ）在基板（ 52 ）上。 展开▼

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公开/公告号US2009280598A1

专利类型

公开/公告日2009-11-12

原文格式PDF

申请/专利权人 CALVIN J. CURTIS;ALEXANDER MIEDANER;MAIKEL VAN HEST;DAVID S. GINLEY;JENNIFER A. NEKUDA;
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申请/专利号US20060813474

发明设计人 MAIKEL VAN HEST;CALVIN J. CURTIS;ALEXANDER MIEDANER;DAVID S. GINLEY;JENNIFER A. NEKUDA;
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申请日2006-11-09

分类号H01L21/10;

国家 US

入库时间 2022-08-21 18:53:10

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3. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors [P] . 美国专利： US8057850B2 . 2011-11-15

机译：由硒化铟和硒化铜前体形成硒化铜铟和/或硒化铜铟镓硒

4. FORMATION OF COPPER-INDIUM-SELENIDE AND/OR COPPER-INDIUM-GALLIUM-SELENIDE FILMS FROM INDIUM SELENIDE AND COPPER SELENIDE PRECURSORS [P] . 世界知识产权组织专利： WO2008057119A1 . 2008-05-15

机译：由硒化铟和硒化铜前体形成铜铟硒化物和/或铜铟镓硒化物薄膜

5. PRECURSORS FOR FORMATION OF COPPER SELENIDE, INDIUM SELENIDE, COPPER INDIUM DISELENIDE, AND/OR COPPER INDIUM GALLIUM DISELENIDE FILMS [P] . 欧洲知识产权局专利： EP2944383A3 . 2016-02-10

机译：形成硒化铜，硒化铟，硒化铜铟和/或硒化铜铟膜的前体

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9. Cadmium Sulfide/Copper Selenide Cell Research. Copper Selenide-Based Thin Film Solar Cells. First Quarterly Technical Progress Report, June 1-September 1, 1980 [R] . Mickelsen, R. A., Stewart, J. M., Chen, W. S. 1980

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