首页> 外国专利> CRYSTAL GROWING SYSTEM HAVING MULTIPLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD

CRYSTAL GROWING SYSTEM HAVING MULTIPLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD

机译:具有多个坩埚并使用温度梯度法的晶体生长系统

摘要

A multiple crucible crystal growing system using a temperature gradient method is disclosed. The system comprises a crystal furnace, a plurality of crucibles, and an elevating device, wherein the furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner includes an outer shell, a fiber insulation layer, an insulation brick layer, and a refractory layer. The height of the refractory layer is ⅔-⅚ of the height of the hearth, and the heater is located at ¼-½ of the height of the hearth. The hearth is in rectangular shape and able to hold multiple crucibles to grow crystals simultaneously. The present invention ensures doping concentration and uniformity. Therefore, it can be widely applied in the area of crystal growth.
机译:公开了一种使用温度梯度法的多坩埚晶体生长系统。该系统包括晶体炉,多个坩埚和升降装置,其中该炉包括炉体,加热器和炉床,其中炉体从外到内包括外壳,纤维绝缘层,隔热砖层和耐火层。耐火层的高度为炉床高度的1 / 3-1 / 3,加热器位于炉床高度的1 / 4-1 / 2处。炉膛为矩形,能够容纳多个坩埚以同时生长晶体。本发明确保了掺杂浓度和均匀性。因此,它可以广泛地应用于晶体生长领域。

著录项

  • 公开/公告号US2010037816A1

    专利类型

  • 公开/公告日2010-02-18

    原文格式PDF

  • 申请/专利权人 YOUBAO WAN;

    申请/专利号US20070448654

  • 发明设计人 YOUBAO WAN;

    申请日2007-12-27

  • 分类号C30B11/00;

  • 国家 US

  • 入库时间 2022-08-21 18:54:48

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