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DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL
DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL
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机译：快速热氧化钝化太阳能电池的双退火工艺
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摘要
Embodiments of the invention generally contemplate methods for treating a semiconductor solar cell substrate to reduce the number of undesirable material defects or interface state traps on the surface or within the substrate. These defects can adversely affect the efficiency of the solar cell because electron-hole pairs tend to recombine with the defects and are essentially lost without generating any useful electrical current. In one aspect, a method of forming a solar cell on a semiconductor substrate is provided, comprising doping a front surface of the substrate, applying a passivating layer to the front surface and/or a back surface of the substrate, and annealing the substrate to reduce the interface state trap density (Dit).
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机译：本发明的实施例通常考虑用于处理半导体太阳能电池衬底以减少衬底的表面上或内部的不期望的材料缺陷或界面状态陷阱的数量的方法。这些缺陷会不利地影响太阳能电池的效率，因为电子-空穴对趋于与缺陷重新结合，并且在没有产生任何有用电流的情况下基本上会丢失。在一个方面，提供了一种在半导体衬底上形成太阳能电池的方法，该方法包括：掺杂衬底的前表面;在衬底的前表面和/或后表面上施加钝化层;以及将衬底退火至降低接口状态陷阱密度（D it ）。
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