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Ga dope crystal silicon, in the production manner of the solar battery and its production mannered null Ga dope crystal silicon which use the Ga dope crystal silicon production device, and the Ga dope crystal silicon
Ga dope crystal silicon, in the production manner of the solar battery and its production mannered null Ga dope crystal silicon which use the Ga dope crystal silicon production device, and the Ga dope crystal silicon
PROBLEM TO BE SOLVED: To provide a method for suppressing the scattering(nonuniforming) of the resistivity of a Ga-doped polycrystal Si manufactured by the cast method, and to provide a technical method for enhancing the manufacturing yield of a polycrystal silicon solar battery.;SOLUTION: The method for manufacturing the Ga-doped crystal silicon comprises a melting step of mixing a raw material silicon with a gallium dopant and heating the resultant mixture to a predetermined temperature to melt the same and a crystal growing step of cooling the melted raw material silicon and growing the crystal silicon. The method is further characterized by adding a new raw material silicon to the melted raw material silicon in the crystal growing step. The Ga-doped crystal silicon manufacturing apparatus used for the manufacturing method is provided. The solar battery using the Ga-doped crystal silicon is also provided. The method for manufacturing the solar battery comprises a substrate manufacturing step of manufacturing the substrate from the Ga-doped crystal silicon, a p-n junction forming step of forming a p-n junction to the manufactured substrate and an electrode forming step of forming an electrode on the substrate in which the p-n junction is formed.;COPYRIGHT: (C)2005,JPO&NCIPI
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