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CONTROL OF PHOTOELECTROCHEMICAL (PEC) ETCHING BY MODIFICATION OF LOCAL ELECTROCHEMICAL POTENTIAL OF SEMICONDUCTOR STRUCTURE RELATIVE TO ELECTROLYTE
CONTROL OF PHOTOELECTROCHEMICAL (PEC) ETCHING BY MODIFICATION OF LOCAL ELECTROCHEMICAL POTENTIAL OF SEMICONDUCTOR STRUCTURE RELATIVE TO ELECTROLYTE
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机译：通过修饰相对于电解质的半导体结构的局部电化学势来控制光化学（PEC）刻蚀
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摘要
PROBLEM TO BE SOLVED: To provide a method for manufacturing a III-nitride semiconductor structure and including the strategic modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte so that highly-selective photo-induced etching is performed.;SOLUTION: The method locally controls the electrical potential of a semiconductor structure or a device, and thereby locally controls lateral and/or vertical photoelectrochemical (PEC) etching rates by the appropriate placement of electrically resistive layers or layers that impede electron flows in the semiconductor structure, and/or by disposing a cathode in contact with a specific layer of the semiconductor structure during PEC etching.;COPYRIGHT: (C)2010,JPO&INPIT
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