首页> 外国专利> Transversal surface acoustic wave device for use in communication device i.e. mobile telephone, has resonator formed on diffusion substrate, and carrier substrate including material selected from group consisting of silicon and quartz glass

Transversal surface acoustic wave device for use in communication device i.e. mobile telephone, has resonator formed on diffusion substrate, and carrier substrate including material selected from group consisting of silicon and quartz glass

机译:用于通信设备即移动电话中的横向表面声波设备,具有形成在扩散基板上的谐振器,以及包括选自硅和石英玻璃的材料的载体基板。

摘要

The device has a diffusion substrate provided with a piezoelectric mono crystal selected from a group consisting of lithium niobate, lithium tantalite and lithium niobate-lithium tantalite-solid solution. An organic adhesive layer is provided with a thickness of 0.1 to 1 micrometer and connects a carrier substrate (1) and the diffusion substrate. An acoustic surface wave filter or a resonator is formed on the diffusion substrate. The substrate (1) has a material that is selected from a group consisting of silicon, sapphire, aluminum nitride, aluminum oxide, borosilicate glass and quartz glass.
机译:该装置具有扩散基板,该扩散基板设置有选自铌酸锂,钽酸锂和铌酸锂-钽酸锂固溶体中的压电单晶。有机粘合剂层的厚度为0.1至1微米,并连接载体基板(1)和扩散基板。声表面波滤波器或谐振器形成在扩散基板上。基板(1)具有选自由硅,蓝宝石,氮化铝,氧化铝,硼硅酸盐玻璃和石英玻璃组成的组的材料。

著录项

  • 公开/公告号DE102009001192A1

    专利类型

  • 公开/公告日2009-10-29

    原文格式PDF

  • 申请/专利权人 NGK INSULATORS LTD.;

    申请/专利号DE20091001192

  • 发明设计人 YOSHINO TAKASHI;SUZUKI KENJI;

    申请日2009-02-26

  • 分类号H03H9/25;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:02

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