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Semiconductor laser has resonator end face, another resonator end face, and semiconductor surface area, where rib-shaped structure extends from former resonator end face to latter resonator end face with constant width
Semiconductor laser has resonator end face, another resonator end face, and semiconductor surface area, where rib-shaped structure extends from former resonator end face to latter resonator end face with constant width
The semiconductor laser (10) has a resonator end face, another resonator end face and a semiconductor surface area. A rib-shaped structure (14A) extends from the former resonator end face to the latter resonator end face with constant width. Two channels (14B) are provided, which extend on both sides of the rib-shaped structure and adjacent to the rib-shaped structure. Two areas (14C,14D) are provided, which extend adjacent to the channels. An independent claim is included for a method for manufacturing a semiconductor laser.
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