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Integrated circuit for use in flash memory i.e. NAND-type flash memory, of cellular telephone, has gate stacks coupled to other gate stacks, where each gate stack is provided with control electrode that includes layer
Integrated circuit for use in flash memory i.e. NAND-type flash memory, of cellular telephone, has gate stacks coupled to other gate stacks, where each gate stack is provided with control electrode that includes layer
The circuit has set of gate stacks coupled to another set of gate stacks e.g. tantalum nitride-aluminum oxide-nitride-oxide-silicon gate stacks. Each gate stack is provided with a control electrode that includes a layer. The latter set of gate stacks is provided with charge storage layers. The control electrodes of the former set of gate stacks contain a poly-silicon layer. The control electrodes of the gate stacks are provided with a tungsten and/or a tungsten nitride layer. An independent claim is also included for a method for manufacturing an integrated circuit.
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