首页> 外国专利> Single-layer semiconductor or multi-layer semiconductor, has three-value PNP or NPN layers and are designed in form of negative temperature coefficient thermistor and positive temperature coefficient thermistor

Single-layer semiconductor or multi-layer semiconductor, has three-value PNP or NPN layers and are designed in form of negative temperature coefficient thermistor and positive temperature coefficient thermistor

机译:单层半导体或多层半导体,具有三值PNP或NPN层,并以负温度系数热敏电阻和正温度系数热敏电阻的形式设计

摘要

The single-layer semiconductor or multi-layer semiconductor has 3-value PNP or NPN layers. The single-layer semiconductor or multi-layer semiconductor is designed in the form of a negative temperature coefficient thermistor and a positive temperature coefficient thermistor. The 4-value PNPN or NPNP emitter layers of gallium arsenide are used in the emitter layer structure in the transistors, in the case of multi-layer structures.
机译:单层半导体或多层半导体具有三值PNP或NPN层。单层半导体或多层半导体以负温度系数热敏电阻和正温度系数热敏电阻的形式设计。在多层结构的情况下,砷化镓的4值PNPN或NPNP发射极层用于晶体管的发射极层结构中。

著录项

  • 公开/公告号DE102007038917A1

    专利类型

  • 公开/公告日2009-02-19

    原文格式PDF

  • 申请/专利权人 LUDWIG GUENTHER;

    申请/专利号DE20071038917

  • 发明设计人 LUDWIG GUENTHER;

    申请日2007-08-17

  • 分类号H01L29/24;B03B9/06;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:41

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