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N-doped zone manufacturing method for semiconductor wafer e.g. silicon wafer, involves diffusing protons from end-of-range area along direction of wafer front side, and developing n-doped semiconductor zone with hydrogen-induced donors
N-doped zone manufacturing method for semiconductor wafer e.g. silicon wafer, involves diffusing protons from end-of-range area along direction of wafer front side, and developing n-doped semiconductor zone with hydrogen-induced donors
The method involves implanting protons with implantation energy of 0.7-20 mega electron volts over a front side (101) in a semiconductor wafer (100). An area of front side of the wafer is heated to a temperature of 400-530 degrees centigrade for a time period between 60 minutes and 50 hours when a temperature process is executed. Protons from an end-of-range area diffuse in the direction of the front side of the wafer and develop an n-doped semiconductor zone (105) with hydrogen-induced donors and between the wafer front side and the end-of-range area. An independent claim is also included for a power semiconductor component with a semiconductor body and a component zone.
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