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Integrated circuit for resistivity changing devices, has memory cell, which comprises two resistivity changing layers stacked one above other, in which each resistivity changing layer serves as separate data storage layer
Integrated circuit for resistivity changing devices, has memory cell, which comprises two resistivity changing layers stacked one above other, in which each resistivity changing layer serves as separate data storage layer
The integrated circuit has a memory cell, which comprises two resistivity changing layers stacked one above the other. Each resistivity changing layer serves as separate data storage layer and comprises individual data storage characteristics. Each resistivity changing layer comprises individual data retention characteristics or data writing characteristics. The former resistivity changing layer comprises germanium sulfide, silver sulfide or combination of these materials. The latter resistivity changing layer comprises germanium-selenium or silver-selenium or combination of these materials. Independent claims are also included for the following: (1) a memory cell comprises two resistivity changing layers stacked one above the other (2) a memory cell array comprises multiple memory cells (3) a method for operating an integrated circuit.
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