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METHOD FOR FORMING THIN FERROELECTRIC FILMS, ITS APPLICATION AND REMEMBERING DEVICE BASED ON FERROELECTRIC OLIGOMERIC REMEMBERING MATERIAL
METHOD FOR FORMING THIN FERROELECTRIC FILMS, ITS APPLICATION AND REMEMBERING DEVICE BASED ON FERROELECTRIC OLIGOMERIC REMEMBERING MATERIAL
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机译：基于铁电低聚记忆材料的薄铁电薄膜的形成方法，应用及记忆装置
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摘要
1. A method of forming thin ferroelectric films from an oligomer or co-oligomer of vinylidene fluoride (VDF), according to which the VDF oligomer or VDF co-oligomer with another oligomer is applied to a substrate to form a thin film thereon by evaporation carried out in a sealed chamber in which the substrate is enclosed and evaporator, characterized in that it includes the following operations:! a) the sealed chamber is pumped out to a pressure of less than 100 Pa,! b) cool the substrate to a temperature in the temperature range in which the main part of the oligomer or co-oligomer crystallizes into a polar crystalline phase oriented parallel to the substrate, but not lower than the temperature at which the pressure of saturated water vapor in the chamber becomes equal to the partial pressure of water vapor to the beginning of cooling, and not lower than -130 ° C,! c) the oligomer or co-oligomer is evaporated onto the substrate with the formation of a thin film of a given thickness,! d) after reaching a predetermined thickness with a thin film of oligomer or co-oligomer, the temperature of the substrate is raised to room temperature and! e) heating the deposited thin film of an oligomer or co-oligomer to a temperature in the range of 50-150 ° C. to anneal the deposited thin film to convert the residual non-polar crystalline phase to a polar crystalline phase. ! 2. The method according to claim 1, characterized in that they use an oligomer or co-oligomer of VDF containing less than 100 repeating units. ! 3. The method according to claim 1, characterized in that the source is used oligomer or co-oligomer VDF having a given length. ! 4. The method according to claim 1, characterized in that the original
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