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METHOD OF MANUFACTURING MIS structures on InAs for multielement photodetectors

机译：在InAs上制造用于多元素光电探测器的MIS结构的方法

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FIELD: physics.;SUBSTANCE: invention relates to microelectronics and can be used in making multi-element infrared photodetectors. In the method of making a MIS-structure on InAs for multi-element photodetectors, a semiconductor substrate of indium arsenide is immersed into an electrolyte, containing an electroconductive component, an organic solvent and a fluorine containing additive - ammonium fluoride. Anodic oxidation is done, creating a thin layer which forms a semiconductor-dielectric boundary surface. The substrate is then taken out and on the thin layer which forms the boundary surface, a dielectric layer is grown, after which the gate is formed. In the electrolyte, the fluorine containing additive is taken in an amount ranging from 0.1 to 15 g/l.;EFFECT: higher quality of the MIS-structure due to reduced surface-state density to the order of 1010cm-2eV-1 and built-in charge to values less than 1011cm-2 resulting from formation of arsenic and indium fluorides, as well as indium phosphate at the inter-phase boundary.;11 cl, 1 dwg, 4 ex
机译：技术领域本发明涉及微电子学，并且可以用于制造多元件红外光电探测器。在用于多元素光电探测器的InAs上制造MIS结构的方法中，将砷化铟的半导体衬底浸入电解质中，该电解质包含导电成分，有机溶剂和含氟添加剂-氟化铵。进行阳极氧化，形成薄层，该薄层形成半导体-介电界面。然后取出衬底，并在形成边界表面的薄层上生长介电层，然后形成栅极。在电解质中，含氟添加剂的用量范围为0.1至15 g / l。效果：由于表面态密度降低到10 10 cm -2 eV -1 ，内置电荷小于10 11 cm -2 是由于在相界面处形成了砷和氟化铟以及磷酸铟而形成的; 11 cl，1 dwg，4 ex

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