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METHOD FOR FABRICATING PATTERN IN PHOTOMASK USING PLASMA DRY ETCHING TO IMPROVE THE LINE WIDTH PROFILE OF THE LIGHT BLOCK FILM PATTERN
METHOD FOR FABRICATING PATTERN IN PHOTOMASK USING PLASMA DRY ETCHING TO IMPROVE THE LINE WIDTH PROFILE OF THE LIGHT BLOCK FILM PATTERN
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机译：等离子干刻法在光掩膜中制作图案的方法，以改善光阻膜图案的线宽分布
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摘要
PURPOSE: A method for fabricating pattern in photomask using plasma dry etching are provided to increase the exposure process margin by optical characteristic improvement of a photomask.;CONSTITUTION: The phase shift layer(110) and light shield layer are formed on the substrate(100). The resist pattern which selectively exposes the light shield layer on the light shield layer is formed. The light block film pattern(120a) is formed by a dry etching of the light shield layer exposed by the resist pattern using first plasma of the etching gas and inactive gas. The footing defect caused in the light block film pattern side wall is removed by the second plasma. The phase shift layer pattern is formed by etching the phase shift layer.;COPYRIGHT KIPO 2010
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