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aluminum etching the underlying substrate used for P (VDF-TrFE) based capacitors and P (VDF-TrFE) based how to improve temperature stability of the capacitor

机译:铝蚀刻用于基于P(VDF-TrFE)的电容器和基于P(VDF-TrFE)的底层衬底如何提高电容器的温度稳定性

摘要

The etched aluminum bottom electrode having the pattern periodic and nono tophographic is used to improve the high-temperature stability of ferroelectric polarization in the capacitor. The etching aluminum bottom electrode having the nano-size surface structure of periodic and topographical form is used. A (VDF-TrFE) polymer thin film has the sandwich configuration between the different metallic electrodes. In case of using the etching aluminum bottom electrode, the thermal stability increases about 50 deg C and ferroelectricity can be maintained even in annealing of about 185 deg C. The surface of the etched aluminum bottom electrode has periodically the recessed semi-spherical bowl shape of nano-size.
机译:具有周期性和非层析的图案的经蚀刻的铝底部电极用于改善电容器中铁电极化的高温稳定性。使用具有周期性和形貌形式的纳米尺寸表面结构的蚀刻铝底部电极。 (VDF-TrFE)聚合物薄膜在不同的金属电极之间具有夹心结构。在使用蚀刻铝底部电极的情况下,即使在约185℃退火的情况下,热稳定性也提高约50℃,并且可以保持铁电性。蚀刻铝底部电极的表面周期性地具有凹陷的半球形碗状形状。纳米尺寸。

著录项

  • 公开/公告号KR100873893B1

    专利类型

  • 公开/公告日2008-12-15

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070047670

  • 发明设计人 박철민;강석주;박연정;

    申请日2007-05-16

  • 分类号H01L27/105;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:17

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