首页> 外国专利> ALUMINUM NITRIDE SUBSTRATE WITH OXIDE LAYER, ALUMINUM NITRIDE SINTERED COMPACT, PROCESSES FOR PRODUCING THE ALUMINUM NITRIDE SUBSTRATE AND THE ALUMINUM NITRIDE SINTERED COMPACT, CIRCUIT BOARD, AND LED MODULE

ALUMINUM NITRIDE SUBSTRATE WITH OXIDE LAYER, ALUMINUM NITRIDE SINTERED COMPACT, PROCESSES FOR PRODUCING THE ALUMINUM NITRIDE SUBSTRATE AND THE ALUMINUM NITRIDE SINTERED COMPACT, CIRCUIT BOARD, AND LED MODULE

机译:带有氧化层的氮化铝基板,氮化铝烧结体,生产氮化铝基板和氧化铝烧结体的方法,电路板以及LED模块

摘要

Disclosed is an aluminum nitride substrate comprising an aluminum nitride sintered compact and an oxide layer having a high adhesive strength provided on a surface of the aluminum nitride sintered compact. The aluminum nitride substrate comprises an oxide layer (3) and is characterized in that the oxide layer contains aluminum nitride crystal particles (4) and the thickness of a virtual layer formed of only aluminum oxide calculated based on the total content of the aluminum oxide component in the oxide layer is 5 to 100 μm.
机译:公开了一种氮化铝基板,其包括氮化铝烧结体和设置在氮化铝烧结体的表面上的具有高粘合强度的氧化物层。氮化铝基板包括氧化物层(3),并且特征在于该氧化物层包含氮化铝晶体颗粒(4)并且仅基于氧化铝成分的总含量计算出的仅由氧化铝形成的虚拟层的厚度。氧化物层中的Al为5〜100μm。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号